sep.2000 w h k f s j j z e c e g u m c a r p b t e d q l g n y - thd (2 typ.) v - thd (2 typ.) x - dia. (4 typ.) e e c g description: mitsubishi igbt modules are designed for use in switching applications. each module consists of one igbt in a single configura- tion with a reverse-connected su- per-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. features: u low drive power u low v ce(sat) u discrete super-fast recovery free-wheel diode u high frequency operation u isolated baseplate for easy heat sinking applications: u ac motor control u motion/servo control u ups u welding power supplies ordering information: example: select the complete part module number you desire from the table below -i.e. cm600ha- 12h is a 600v (v ces ), 600 am- pere single igbt module. type current rating v ces amperes volts (x 50) cm 600 12 dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 3.66 0.008 93.0 0.25 d 2.44 0.008 62.0 0.25 e 1.57 40.0 f 1.42 max. 36.0 max. g 1.14 29.0 h 1.00 max. 25.5 max. j 0.94 24.5 k 0.93 24.0 l 0.83 21.0 m 0.71 18.0 dimensions inches millimeters n 0.69 17.5 p 0.61 15.5 q 0.51 13.0 r 0.49 12.5 s 0.45 11.5 t 0.43 11.0 u 0.35 9.0 v m8 metric m8 w 0.28 7.0 x 0.256 dia. dia. 6.50 y m4 metric m4 z 0.12 3.0 outline drawing and circuit diagram mitsubishi igbt modules CM600HA-12H high power switching use insulated type
sep.2000 absolute maximum ratings, t j = 25 c unless otherwise specified symbol ratings units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current (t c = 25 c) i c 600 amperes peak collector current (t j 150 c) i cm 1200* amperes emitter current** (t c = 25 c) i e 600 amperes peak emitter current** i em 1200* amperes maximum collector dissipation (t c = 25 c) p c 2100 watts mounting torque, m8 main terminal C 8.83~10.8 n m mounting torque, m6 mounting C 1.96~2.94 n m mounting torque, m4 terminal C 0.98~1.47 n m weight C 560 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 vrms * pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). static electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v C C 0.5 m a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 4.5 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v C 2.1 2.8** volts i c = 600a, v ge = 15v, t j = 150 c C 2.15 C volts total gate charge q g v cc = 300v, i c = 600a, v ge = 15v C 1800 C nc emitter-collector voltage v ec i e = 600a, v ge = 0v C C 2.8 volts ** pulse width and repetition rate should be such that device junction temperature rise is negligible. dynamic electrical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units input capacitance c ies C C 60 nf output capacitance c oes v ge = 0v, v ce = 10v C C 21 nf reverse transfer capacitance c res C C 12 nf resistive turn-on delay time t d(on) C C 350 ns load rise time t r v cc = 300v, i c = 600a, C C 700 ns switching turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 1.0 w C C 350 ns times fall time t f C C 300 ns diode reverse recovery time t rr i e = 600a, di e /dt = C1200a/ m s C C 110 ns diode reverse recovery charge q rr i e = 600a, di e /dt = C1200a/ m s C 1.62 C m c thermal and mechanical characteristics, t j = 25 c unless otherwise specified characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) per igbt C C 0.06 c/w thermal resistance, junction to case r th(j-c) per fwdi C C 0.12 c/w contact thermal resistance r th(c-f) per module, thermal grease applied C C 0.035 c/w mitsubishi igbt modules CM600HA-12H high power switching use insulated type
sep.2000 mitsubishi igbt modules CM600HA-12H high power switching use insulated type collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0246810 600 200 0 v ge = 20v 15 12 11 8 7 t j = 25 o c 400 800 1000 10 9 1200 gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer characteristics (typical) 048121620 800 600 400 200 0 1200 1000 v ce = 10v t j = 25 c t j = 125 c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 5 0 200 400 600 1000 4 3 2 1 0 1200 v ge = 15v t j = 25 c t j = 125 c 800 gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 048121620 8 6 4 2 0 t j = 25 c i c = 240a i c = 1200a i c = 600a 0 0.8 1.6 2.4 3.2 4.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 2 10 4 emitter current, i e , (amperes) t j = 25 c 10 3 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 -1 10 0 10 2 10 2 10 1 10 0 v ge = 0v 10 1 c ies c oes c res emitter current, i e , (amperes) reverse recovery time, t rr , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 3 10 2 10 1 t rr i rr 10 2 10 1 10 0 reverse recovery current, i rr , (amperes) di/dt = -1200a/ m sec t j = 25 c gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge, v ge 20 0 400 800 1200 1600 2000 16 12 8 4 0 i c = 600a 2400 v cc = 300v v cc = 200v collector current, i c , (amperes) 10 1 10 2 10 3 10 3 10 2 10 1 t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 1.0 w t j = 125 c t f switching time, (ns) half-bridge switching characteristics (typical)
sep.2000 mitsubishi igbt modules CM600HA-12H high power switching use insulated type time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (igbt) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.06 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3 time, (s) normalized transient thermal impedance, z th(j-c) transient thermal impedance characteristics (fwdi) 10 1 10 -5 10 -4 10 -3 10 0 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 single pulse t c = 25 c per unit base = r th(j-c) = 0.12 c/w z th = r th ?(normalized value) 10 -1 10 -2 10 -3
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